Groundbreaking Study Unveils Gate-Tunable Transmon Qubit in Germanium
A groundbreaking study published on 2024-03-25 in arXiv has demonstrated the creation of a gate-tunable transmon qubit, or 'gatemon', in planar Germanium (Ge). Led by O. Sági, Alessandro Crippa, M. Valentini, and M. A. Janik, this research marks a significant step towards developing advanced hybrid quantum circuits and devices with new functionalities.
The gatemon's resonant frequency can be electrically tuned over a range of 5 GHz, exhibiting a quasi-monotonic linear dependence on the gate voltage. This tunability was demonstrated across a broad frequency range, showing potential for highly-coherent spin qubits and gate-tunable hybrid Josephson junctions in Germanium (Ge) and GeSiGe heterostructures.
The study also explored the relaxation times of the qubit. By varying the gate voltage, the qubit relaxation time (T1) could be adjusted from 80 ns to 20 ns. However, the dephasing time (T2) did not show a clear trend. Additionally, a control qubit on the same material stack was studied, delving into the challenges and solutions in merging superconducting and semiconductor spin qubit platforms.
The research, conducted in 2024, suggests that Ge gatemons could pave the way for innovative hybrid quantum circuits and devices. By harnessing the tunability and coherence of these qubits, scientists can potentially unlock new functionalities in quantum computing and communication. The study, published by O. Sági and colleagues, highlights the promise of CMOS-compatible materials like Germanium for advancing quantum technologies.
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